Partner: Fraunhofer IISB
Advanced Technology: π-Fab infrastructure
Contact: Markus Pfeffer

π-Fab infrastructure FRAUNHOFER (FhG)

π-Fab – Low Volume Prototype Fabrication of Customized Electron Devices

Device development conducted at our institute can be transferred into a small-volume manufacturing process by ISO 9001 certified “π-Fab”. π-Fab is a joint collaboration between the Fraunhofer IISB and the Chair of Electron Devices dedicated to the realization of prototype devices under an industry-compatible fabrication environment. Fabrication ranges from single process steps across process modules up to full-fledged device fabrication including Statistical Process Control and Process Control Measurements on calibrated measurement tools. Additionally, electrical characterization for 100% device testing is available. These activities allow for the first phase of a product ramp-up when fabrication capacities by foundries – due to non-standard CMOS technology requirements – or the global players in power device fabrication are not yet available due to the low production values.

π-Fab facts:

  • P rocess line based on 0.8 µm CMOS technology
  • Wafers: Si, SiC, and others
  • Wafer sizes: samples to 200 mm
  • Devices
    • CMOS
    • Power
    • Sensors
    • MEMS
    • Passives

For more information:

Markus Pfeffer
Fraunhofer IISB, Erlangen, Germany