π-Fab infrastructure FRAUNHOFER (FhG)

π-Fab – Low Volume Prototype Fabrication of Customized Electron Devices

Device development conducted at our institute can be transferred into a small-volume manufacturing process by ISO 9001 certified “π-Fab”. π-Fab is a joint collaboration between the Fraunhofer IISB and the Chair of Electron Devices dedicated to the realization of prototype devices under an industry-compatible fabrication environment. Fabrication ranges from single process steps across process modules up to full-fledged device fabrication including Statistical Process Control and Process Control Measurements on calibrated measurement tools. Additionally, electrical characterization for 100% device testing is available. These activities allow for the first phase of a product ramp-up when fabrication capacities by foundries – due to non-standard CMOS technology requirements – or the global players in power device fabrication are not yet available due to the low production values.

π-Fab facts:

• P rocess line based on 0.8 µm CMOS technology
• Wafers: Si, SiC, and others
• Wafer sizes: samples to 200 mm
• Devices
  • CMOS
  • Power
  • Sensors
  • MEMS
  • Passives

For more information:

Markus Pfeffer
Fraunhofer IISB, Erlangen, Germany
Markus.Pfeffer@iisb.fraunhofer.de
https://www.iisb.fraunhofer.de/
https://eurocps.org/design-centers/fhg-germany/